发明名称 Aperture stop
摘要 A method of manufacturing an aperture stop with a rectangular aperture for an electron beam exposure device, comprising the steps of: preparing a single-crystal silicon substrate with one side having a (100) face; providing a mask on said side of the substrate; selectively etching the substrate through the mask from said side to form a projecting portion of rectangular cross section by anisotropic etching; forming an aperture layer by covering said one side of the etched substrate with a high-melting-point metal having good electric conductivity, thereby surrounding said projecting portion; and forming in said aperture layer a rectangular aperture with a cross section corresponding to the cross section of said projecting portion by removing said substrate from the aperture layer.
申请公布号 US4269653(A) 申请公布日期 1981.05.26
申请号 US19790091037 申请日期 1979.11.05
申请人 VLSI TECHNOLOGY RESEARCH ASSOCIATION 发明人 WADA, HIROTSUGU;SHINOZAKI, TOSHIAKI
分类号 C23F1/04;C25D1/08;G02B5/00;G03F1/16;H01J37/09;H01L21/027;(IPC1-7):B23P15/16 主分类号 C23F1/04
代理机构 代理人
主权项
地址