发明名称 |
Aperture stop |
摘要 |
A method of manufacturing an aperture stop with a rectangular aperture for an electron beam exposure device, comprising the steps of: preparing a single-crystal silicon substrate with one side having a (100) face; providing a mask on said side of the substrate; selectively etching the substrate through the mask from said side to form a projecting portion of rectangular cross section by anisotropic etching; forming an aperture layer by covering said one side of the etched substrate with a high-melting-point metal having good electric conductivity, thereby surrounding said projecting portion; and forming in said aperture layer a rectangular aperture with a cross section corresponding to the cross section of said projecting portion by removing said substrate from the aperture layer.
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申请公布号 |
US4269653(A) |
申请公布日期 |
1981.05.26 |
申请号 |
US19790091037 |
申请日期 |
1979.11.05 |
申请人 |
VLSI TECHNOLOGY RESEARCH ASSOCIATION |
发明人 |
WADA, HIROTSUGU;SHINOZAKI, TOSHIAKI |
分类号 |
C23F1/04;C25D1/08;G02B5/00;G03F1/16;H01J37/09;H01L21/027;(IPC1-7):B23P15/16 |
主分类号 |
C23F1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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