Method for operating electric field-effect devices based on critical current control of their superconducting channel and devices for performing that method.

摘要

Proposed is a method for operating a field-effect device comprised of a superconducting current channel (23) having source and drain electrodes (24, 25) connected thereto, said superconducting current channel (23) being separated from a gate electrode (19) by an insulating layer (22), where the resistance of said current channel (23) is controlled by varying the critical current of the superconducting material through the application of an electrical field across the superconducting current channel (23), which in turn changes the density of the mobile charge carriers in the superconducting material. Taught is also an inverted MISFET device for performing that method, the device being characterized in that on an electrically conductive substrate (19) an insulating layer (22) is provided which in turn carries a layer (23) consisting of a superconducting material, and that a gate electrode (20) is attached to said substrate (19), and source and drain electrodes (24, 25) are electrically connected to said superconductor layer (23). Advantageously, between the substrate (19) and the superconductive layer (23), a metallic passivation layer (21) may be provided. <IMAGE>