| 摘要 |
<p>A semiconductor laser comprises a GaAs or InP substrate, and upper and lower two cladding layers formed on the GaAs or InP substrate to form a double hetero structure across an active layer, wherein either of or both of the cladding layers are formed of II-VI group compound semiconductor of MgxZnyCd1-x-yS system or MgjZnkCd1-j-kSe system. <IMAGE></p> |
