| 摘要 |
<p>A high value integrated circuit resistor and method for making it are disclosed. The resistor includes a layer comprising silicon on a substrate, a BF2 dopant in said layer comprising silicon, and a donor impurity dopant in contact regions of said layer comprising silicon. In one preferred embodiment the layer comprising silicon is amorphous silicon and in another preferred embodiment it is polysilicon. A method for making the resistor is presented in which a layer of amorphous silicon or polysilicon is provided into which BF2 is implanted. The energy by which the BF2 is implanted is selected to place a peak of implanted BF2 concentration near the center of the thickness of the polysilicon film. Contacts to the resistor are formed by implanting a donor type dopant, such as arsenic, into contact areas of the layer, and finally films of undoped oxide and BPSG are formed over the resistor, and reflowed to form a planarized surface. <IMAGE></p> |
