| 摘要 |
The method is applied in radioelectronics, instrument production and telecommunications equipment. It is simple and enhances yield. Following the method, on the facial part of a dielectric substrate under vacuum are consecutively deposited thin resistive, adhesive, conducting and protective layers, while its rear part - thin adhesive, conducting and protective layers. Through two consecutive photolithographies and electrochemical deposition of a conducting, barrier and anti-corrosive layer, are formed thin-layer resistors, contacting yards and micro-band elements. After thermal treatment and adjustment of the thin-layer resistors, follows the positioning of discrete elements.
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