SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a semiconductor memory device which is provided with no sharp angle at the end of a memory node and inhibits the generation of insulation breakdown and its manufacturing method. CONSTITUTION:A semiconductor memory device is a semiconductor memory device provided with a plurality of memory cells which include an accumulation capacity formed on a semiconductor board 1. The accumulation capacity comprises a memory node 10 whose edge angle is round, a capacity insulation film 11 formed on the memory node 10 and a plate electrode 12 formed on the capacity insulation film 11.