| 摘要 |
<p>PURPOSE:To provide a chip varistor which has less variations in varistor voltge, less leak current and an increased surge resistance when obtaining a varistor characteristic by making use of a Schottky barrier. CONSTITUTION:In a ceramic body 2 which is fabricated by laminating the plurality of semiconductor ceramic layers 7a-7c, a first and a second internal electrode 3, 4 are so buried that they may not overlap each other in the thickness direction 't' of the ceramic layer 7a. Only one end face 3a, 4a of each internal electrode 3, 4 is connected to an external electrode 6 formed on left and right end faces 2a, 2b of the ceramic body 2. Then, an unconnected internal electrode 5 not connected to the external electrode 6 is buried in the ceramic body 2 so that it may overlap the first and the second internal electrode 3, 4 through the semiconductor ceramic layer 7a. Thus, a chip varistor 1 is fabricated.</p> |
