发明名称 ANORDNUNG UND VERFAHREN ZUM KONTAKTIEREN VON LEITENDEN SCHICHTEN
摘要 An indirectly conductive connection between a lower conducting layer (3) and an upper conducting layer (4) which is covered by a second insulating layer is obtained by etching a contact hole (11) in the insulating layer which reveals both a part of the lower (3) and the upper conductive layer (4). The contact hole is filled with a conductive material, especially tungsten, so that the horizontal surface (13) of the insulating layer is not covered by the conductive material.
申请公布号 DE4122362(A1) 申请公布日期 1993.01.14
申请号 DE19914122362 申请日期 1991.07.05
申请人 SIEMENS AG, 8000 MUENCHEN, DE 发明人 MELZNER, HANNO, DIPL.-PHYS., 8152 FELDKIRCHEN, DE;KOERNER, HEINRICH, DR., 8206 BRUCKMUEHL, DE
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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