Structured superconducting conductor strips - formed by epitaxial growth on suitable substrate

摘要

Mfr. of structured conducting strips comprising high-temp. superconductor (HTSC) films. A masking film is deposited on regions of a surface scheduled for the HTSC strips, on a substrate which is suitable for single-crystal growth of the HTSC strips. An inhibitor dopant is then evaporated over the entire substrate surface, and is lifted off from the regions scheduled for the conducting strips by lift-off of the masking layer. After subsequent deposition of the HTSC film on the substrate, with simultaneous or subsequent annealing of the HTSC on the doped substrate surface, an insulating area is formed by the diffusion of the dopant and the superconducting strips are formed by epitaxial growth on the undoped substrate areas. After depositing the masking layer (3) on the substrate surface regions (2) scheduled for the superconducting strips, the mask-free substrate regions (4) are removed by etching until the height of the masked regions (2) is increased in relation to the mask-free regions (4). This results in the HTSC strips, which are deposited after evapn. of the inhibitor layer (5) and subsequent lift-off of the mask and are formed by epitaxial growth, running on the heightened substrate surface (2) insulated from the doped substrate regions (4) carrying the insulator layer (6). A structured conductor strip is also claimed, based on the above, wherein the substrate consists of a material suitable for single-crystal growth of the superconducting strips (7), with elevated regions formed from the regions of the substrate which carry the superconducting strips (7). Pref. YBa2Cu3O7-x is used as the HTSC. The mask-free substrate regions are removed by ion-beam etching. The substrate is strontium titanate, lanthanum aluminate or yttria-stabilised zirconia. ADVANTAGE - The superconducting properties of the conducting strips are not impaired during the mfg. process for the HTSC structures.