发明名称 COMPOSITE POLISHING PAD FOR SEMICONDUCTOR PROCESSING
摘要 <p>An improved composite polishing pad includes a first layer of elastic material 20, a second, stiff layer 22 and a third layer 23 optimized for slurry transport. This third layer is the layer against which the water makes contact during the polishing process. The second layer 22 is segmented into individual sections physically isolated from one another in the lateral dimension. Each segmented section is resilient across its width yet cushioned by the first layer in the vertical direction. The physical isolation of each section combined with the cushioning of the first layer of material create a sort of "bedspring" effect which enables the pad to conform to longitudinal gradations across the water. The third layer 23 may also be segmented as shown, resulting in the formation of a plurality of tiles 25 separated by channels 26. <IMAGE></p>
申请公布号 GB2257382(A) 申请公布日期 1993.01.13
申请号 GB19920003649 申请日期 1992.02.19
申请人 * INTEL CORPORATION 发明人 JOSEPH R * BREIVOGEL;SAM F * LOUKE;MICHAEL R * OLIVER;LEO D * YAU
分类号 B24B37/22;B24B37/26;H01L21/304 主分类号 B24B37/22
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