Magnetostatic-wave devices.

摘要

A magnetostatic wave device comprises a magnetic garnet film epitaxially grown on a Gd3Ga2(GaO4)3 substrate. The film is of a composition of a system (Y,Gd)3Fe5O12 and has the lattice constant substantially equal to that of the substrate, the difference in lattice constant between the substrate and film being not more than 0.01 ANGSTROM . The composition may be modified with a small amount of at least one element selected from the group consisting of Bi, Ga and Al.