发明名称 |
Ion-beam sputtering apparatus and method for operating the same |
摘要 |
An ion-beam sputtering apparatus using an insulator target and a method for operating the same which is characterized by interposing a conductor film forming process during the ion beam processings using the insulator target. This conductor film formation prevents undesired charge build up on the inside of the apparatus and prevents undesired occurrence of abnormal discharge in the ion beam processing using an insulator as a target.
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申请公布号 |
US5178738(A) |
申请公布日期 |
1993.01.12 |
申请号 |
US19910698387 |
申请日期 |
1991.05.10 |
申请人 |
HITACHI, LTD. |
发明人 |
ISHIKAWA, YASUSHI;KANDA, NAOYA;FUJIWARA, AKIO |
分类号 |
C23C14/00;C23C14/46;C23C14/56;C23F4/00 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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