发明名称 Ion-beam sputtering apparatus and method for operating the same
摘要 An ion-beam sputtering apparatus using an insulator target and a method for operating the same which is characterized by interposing a conductor film forming process during the ion beam processings using the insulator target. This conductor film formation prevents undesired charge build up on the inside of the apparatus and prevents undesired occurrence of abnormal discharge in the ion beam processing using an insulator as a target.
申请公布号 US5178738(A) 申请公布日期 1993.01.12
申请号 US19910698387 申请日期 1991.05.10
申请人 HITACHI, LTD. 发明人 ISHIKAWA, YASUSHI;KANDA, NAOYA;FUJIWARA, AKIO
分类号 C23C14/00;C23C14/46;C23C14/56;C23F4/00 主分类号 C23C14/00
代理机构 代理人
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