发明名称 |
Conductivity modulated insulated gate semiconductor device |
摘要 |
A vertical conducting insulating gate bipolar transistor having an emitter region formed in a base region wherein the base region is not shorted to the emitter is provided. The emitter and base regions are formed in an upper portion of a lightly doped semiconductor drift region and an anode region is formed in a bottom portion of the drift region. During forward conduction, minority carriers are injected from the anode into the base region, biasing the base region sufficiently to inject minority carriers into the upper surface of the drift region. The injected minority carriers improve conductivity in the upper portion of the drift region.
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申请公布号 |
US5178370(A) |
申请公布日期 |
1993.01.12 |
申请号 |
US19910740267 |
申请日期 |
1991.08.05 |
申请人 |
MOTOROLA INC. |
发明人 |
CLARK, LOWELL E.;DAVIES, ROBERT B. |
分类号 |
H01L21/331;H01L29/08;H01L29/739 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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