发明名称 Method and apparatus for setting desired logic state at internal point of a select storage element
摘要 An IC having a test grid structure including intersecting probe lines and control/sense lines is used to apply desired logic states directly to internal transmission paths of select storage elements. A switch is located at each intersection for conducting the desired logic state to the internal transmission path. To achieve overwriting and storage of the desired logic state, the conventional storage element is modified to include a transmission gate activated by an overwrite enable signal. The overwrite enable signal is defined by one or more probe lines. To overwrite the contents of a storage element, the storage element is selected by turning on the switch with a probe line coupled to such switch, while the included transmission gate is disabled by receiving the overwrite enable signal. The logic state of the control/sense line is conducted into the storage element to the included transmission gate where it overwrites the current contents and is stored.
申请公布号 US5179534(A) 申请公布日期 1993.01.12
申请号 US19900601969 申请日期 1990.10.23
申请人 CROSSCHECK TECHNOLOGY, INC. 发明人 PIERCE, KERRY M.;FERRY, THOMAS V.
分类号 G11C11/413;G11C11/41;G11C29/00;G11C29/04;G11C29/56;H03K3/356 主分类号 G11C11/413
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