| 摘要 |
PURPOSE:To enable a semiconductor integrated circuit device provided with MOSFETs as component elements to be enhanced in high speed operation and ESD resistance. CONSTITUTION:A buffer circuit directly connected to an external device containing a first N channel MOSFET is formed in a buffer circuit region 121, and an inner circuit which contains a second N channel MOSFET is formed in an inner circuit region 122. The gate electrodes 106a and 106b of the first and the second MOSFET are of polycide structure containing titanium silicide films 105a and 105b and low in resistance, and the source and the drain region of the second MOSFET are of polycide structure containing a titanium silicide film 112b and low in resistance. A region which is formed of only an N<+> source/ drain diffusion layer 113a and not lessened in resistance is provided between the gate electrode 106a and the titanium silicide film 112a in the source/drain region of the first MOSFET. |
