| 摘要 |
PURPOSE:To provide a semiconductor device which prevents field concentration in a junction between an impurity layer formed immediately below a contact hole and a semiconductor substrate and at a p-n junction. CONSTITUTION:An insulating layer 2 is formed on a p (n)-type semiconductor substrate 1 and a contact hole C is formed at a specified position of the insulating layer 2. An impurity region whose conductivity is different from that of the semiconductor substrate 1 is provided to the semiconductor substrate 1 in opposition to the contact hole C in two layers of an n<+> (p<+>) layer 7 and an n<->(p<->) layer 8 one by one from the side of the contact hole C. |
