发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To avoid crosstalk just after the level change of a sense amplifier activation signal by permitting a bit line pair part adjacent to the bit line pair part connected with one sense amplifier to be electrically separated from the sense amplifier. CONSTITUTION:Plural memory cells MC arranged in the shape of array in a row and column are connected with the plural bit line pairs BL1a, etc., at every column and also connected with the plural word line W1-1, etc., at every row. The sense amplifiers SA1 and SA2 connected with the one end of the bit line pairs BL1a, etc., and amplifying potential difference between the bit line pairs in accordance with the activation signal phiS are provided. Furthermore, a transfer gate Q1a, etc., respectively dividing the plural bit line pairs into the two parts, at least, in accordance with a control signal phiC are provided. By this constitution, crosstalk between the adjacent bit line pairs just after the activation of the sense amplifier is avoided.
申请公布号 JPH052871(A) 申请公布日期 1993.01.08
申请号 JP19910242222 申请日期 1991.09.24
申请人 NEC CORP 发明人 KOMURO TOSHIO
分类号 G11C11/401;G11C11/409;H01L21/8242;H01L27/108 主分类号 G11C11/401
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