| 摘要 |
PURPOSE:To obtain an SIT photo detector which has selective sensitivity characteristics against a specific wave length by specifying the area, the thickness of the depletion layer, etc. in an SIT gate construction. CONSTITUTION:An SIT photo detector is constituted using an n<+> buried layer as a drain region or a source region. Suppose, if a quantum effect required for a wave length lambdai is eta(lambdai) and the total area of a SIT gate is Atot, the area A (lambdai) which selectively receives the wave length lambdai of the p<+> region 58 which constitutes the SIT gate is made approximately Atot.eeta(lambdai)/[1-R(lambdai)]. The R(lambdai), however, is a reflection coefficient against the wave length lambdai, e 2.718. Further, suppose, if an absorption coefficient against the wave length lambdai is alphai, the distance xi between the n junction interface of a p-n diode formed with the SIT gate and the n<+> buried layer and the surface is made 1/alphai (lambdai) and the thickness Wi of the depletion layer is made approximately xi(1-1/e). |
