| 摘要 |
PURPOSE:To suppress the peak value of operation current at the time of driving a sense amplifier and to suppress power source noise so as to avoid the errorneous operation of BiCMOS-type dynamic RAM by realizing a sense amplifier driving system where the characteristic of BiCMOS-type dynamic RAM adopting a direct sense system is practically used. CONSTITUTION:A unit amplifying circuit constituting sense amplifier SAP and SAN is substantially divided into plural groups and the unit amplifying circuit constituting the respective groups is coupled with common source lines SP0 or SP1 and SN0 or SN1 having a different driving timing at every group or is constituted by MOSFET having different size at every group, for example, so as to be driven by the substantially different timing. As a result, the characteristic of BiCMOS-type dynamic RAM, etc., where the amplification of a reading signal by a main amplifier is operated without waiting an amplifying operation by the sense amplifier is practically used so as to shift the driving timing of the unit amplifying circuit in the sense amplifier with sufficient time difference and the peak value of operation current at the time of driving the sense amplifier is suppressed. |
