| 摘要 |
PURPOSE:To form a resist pattern of high contrast, high resolution, and high accuracy without decreasing the throughput during exposure and development to form a super-fine resist pattern by forming a photodecoloring layer with using a photodecoloring material for lithography. CONSTITUTION:A photodecoloring layer 3 is formed on a resist layer 2 having a certain contrast threshold for light of 200-300nm wavelength light. The photodecoloring layer 3 consists of a photodecoloring material containing an organopolysilane having the repeating unit expressed by formula I. A resist pattern 5 is formed by selectively exposing the photodecoloring layer. (R<1> is a bivalent org. group, R<2>, R<3>, R<4>, and R<5> are methyl group, ethyl group, propyl group, or phenyl group, and n is an integer from 1 to 5.) |
