| 发明名称 |
A METHOD OF GETTERING AND FOR DEFECT FORMATION CONTROL DURING THE FABRICATION OF DOUBLE-DIFFUSED INTEGRATED CIRCUIT CELLS AND CELL PRODUCED THEREWITH |
| 摘要 |
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| 申请公布号 |
EP0492991(A3) |
申请公布日期 |
1993.01.07 |
| 申请号 |
EP19910311810 |
申请日期 |
1991.12.19 |
| 申请人 |
SILICONIX INCORPORATED |
发明人 |
HSHIEH, FWU-IUAN;CHANG, MIKE;YILMAZ, HAMZA |
| 分类号 |
H01L21/265;H01L21/28;H01L21/316;H01L21/322;H01L21/336;H01L21/8234;H01L21/8236;H01L27/088;H01L29/06;H01L29/10;H01L29/51;H01L29/78;(IPC1-7):H01L21/322;H01L29/784 |
主分类号 |
H01L21/265 |
| 代理机构 |
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| 主权项 |
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