发明名称 Stabilized circuit of high output power transistor for microwave and milliwave
摘要 An amplifier is comprised of a GaAsFET transistor connected between input matching circuit and output matching circuit for effecting amplification in microwave band and milliwave band. A filter circuit is interposed between the input matching circuit and a gate electrode of the transistor so as to selectively reduce an input impedance at 1/2 frequency of the operation frequency to thereby stabilize the operation of the transistor.
申请公布号 US5177452(A) 申请公布日期 1993.01.05
申请号 US19900628474 申请日期 1990.12.14
申请人 NEC CORPORATION 发明人 HONJO, KAZUHIKO
分类号 H01L29/812;H01L21/338;H01P5/08;H03F1/08;H03F1/56;H03F3/19;H03F3/193;H03F3/60 主分类号 H01L29/812
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