发明名称 |
Stabilized circuit of high output power transistor for microwave and milliwave |
摘要 |
An amplifier is comprised of a GaAsFET transistor connected between input matching circuit and output matching circuit for effecting amplification in microwave band and milliwave band. A filter circuit is interposed between the input matching circuit and a gate electrode of the transistor so as to selectively reduce an input impedance at 1/2 frequency of the operation frequency to thereby stabilize the operation of the transistor.
|
申请公布号 |
US5177452(A) |
申请公布日期 |
1993.01.05 |
申请号 |
US19900628474 |
申请日期 |
1990.12.14 |
申请人 |
NEC CORPORATION |
发明人 |
HONJO, KAZUHIKO |
分类号 |
H01L29/812;H01L21/338;H01P5/08;H03F1/08;H03F1/56;H03F3/19;H03F3/193;H03F3/60 |
主分类号 |
H01L29/812 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|