| 摘要 |
PCT No. PCT/GB90/00143 Sec. 371 Date Sep. 23, 1991 Sec. 102(e) Date Sep. 23, 1991 PCT Filed Feb. 1, 1990 PCT Pub. No. WO90/09033 PCT Pub. Date Aug. 9, 1990.The present invention provides a P-N-P diamond transistor and a method of manufacture thereof. The transistor comprises a diamond substrate having two p-type semiconducting regions separated by an insulating region with an n-type semi-conducting layer established by chemical vapour deposition. Preferably the p-type regions are obtained by doping with boron and controlling the concentration of nitrogen impurities by the use of nitrogen getters. The n-type layer preferably contains phosphorus.
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