发明名称 |
Method for forming carbonaceous films |
摘要 |
Cleaning a device to make a film made from carbon or containing carbon as a main ingredient is carried out by etching the interior of a deposition chamber where the film is formed, with an etching gas in a plasma state selected from the group of hydrogen, oxygen, and a gaseous fluoride, and then cleaning the interior of the deposition chamber with a cleaning gas selected from the group of argon and hydrogen in a plasma state.
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申请公布号 |
US5176791(A) |
申请公布日期 |
1993.01.05 |
申请号 |
US19910731353 |
申请日期 |
1991.07.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ITOH, KENJI;AOYAGI, OSAMU |
分类号 |
B08B7/00;C23C16/44;C23G5/00 |
主分类号 |
B08B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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