发明名称 Method for forming carbonaceous films
摘要 Cleaning a device to make a film made from carbon or containing carbon as a main ingredient is carried out by etching the interior of a deposition chamber where the film is formed, with an etching gas in a plasma state selected from the group of hydrogen, oxygen, and a gaseous fluoride, and then cleaning the interior of the deposition chamber with a cleaning gas selected from the group of argon and hydrogen in a plasma state.
申请公布号 US5176791(A) 申请公布日期 1993.01.05
申请号 US19910731353 申请日期 1991.07.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ITOH, KENJI;AOYAGI, OSAMU
分类号 B08B7/00;C23C16/44;C23G5/00 主分类号 B08B7/00
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