| 摘要 |
A semiconductor device comprises: a drain region made of one conductivity type semiconductor substrate having first and second major surfaces; a source region made of one conductivity type first impurity region and formed inside said drain region with being in contact with said first major surface of the drain region; a gate electrode formed in a first groove having a U shape and covered with an insulating film, said U-shaped first groove being dug from said first major surface of the drain region into said inside of the drain region and positioned in contact with one side of said source region; a second groove dug from said first major surface into said inside of the drain region and positioned in contact with the other side of said source region, a metal functioning as a source electrode being embedded into said second groove so as to constitute a Schottky junction with said drain region; a drain electrode electrically connected to said second major surface of the drain region; and, a channel region formed in a portion of said drain region which is sandwiched by said gate electrode 4 and said metal 33 of the source electrode, said channel region being depicted by means of both a difference between work functions of a material of said gate electrode and of said channel region, and also said Schottky junction when at least a potential at said gate electrode is equal to that of said source electrode, and furthermore a ratio of a length of said channel region to a thickness thereof being selected to be such a value that even when a voltage of said drain electrode is increased to a desirable withstanding voltage, said channel region is not brought into a conduction state.
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