Plasma processing reactor and process for plasma etching.

摘要

A domed plasma reactor chamber (10) uses a device such as an antenna (30) driven by RF energy (LF, MF, or VHF) which is electromagnetically coupled inside the reactor dome (17). The antenna (30) generates a high density, low energy plasma inside the chamber (16) for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode (32C) controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processes. This allows processing of sensitive devices (5) without damage and without microloading, thus providing high yields. <IMAGE>