| 摘要 |
A p-type ohmic contact layer (26) on a p-type II-VI semiconductor body is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least 1 x 10<1><7> cm<-><3>, and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers. <IMAGE> |
