发明名称 Thin layer copper indium selenide mfr. - by forming layer on substrate, irradiating, detecting max. light strength emitted and comparing value, for improved solar cell quality
摘要 Prodn. comprises (a) forming an active CuInSe2 layer (3) on a substrate (1); (b) irradiating the layer in (a) with light having a predetermined wavelength; (c) detecting the max. value of light strength of light emitted through the CuInSe2 independently of radiation in a spectral region; and (d) comparing this max. value with a value of predetermined light strength. The CuInSe2 solar cell itself is also claimed. ADVANTAGE - Quality of the solar cell is improved.
申请公布号 DE4217454(A1) 申请公布日期 1992.12.24
申请号 DE19924217454 申请日期 1992.05.26
申请人 FUJI ELECTRIC CORPORATE RESEARCH & DEVELOPMENT LTD., YOKOSUKA, KANAGAWA, JP 发明人 OHSAWA, MICHIO, YOKOSUKA, KANAGAWA, JP
分类号 H01L31/032;H01L31/0336 主分类号 H01L31/032
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