Thin layer copper indium selenide mfr. - by forming layer on substrate, irradiating, detecting max. light strength emitted and comparing value, for improved solar cell quality
摘要
Prodn. comprises (a) forming an active CuInSe2 layer (3) on a substrate (1); (b) irradiating the layer in (a) with light having a predetermined wavelength; (c) detecting the max. value of light strength of light emitted through the CuInSe2 independently of radiation in a spectral region; and (d) comparing this max. value with a value of predetermined light strength. The CuInSe2 solar cell itself is also claimed. ADVANTAGE - Quality of the solar cell is improved.
申请公布号
DE4217454(A1)
申请公布日期
1992.12.24
申请号
DE19924217454
申请日期
1992.05.26
申请人
FUJI ELECTRIC CORPORATE RESEARCH & DEVELOPMENT LTD., YOKOSUKA, KANAGAWA, JP