Electrically erasable and programmable semiconductor module - has first conductivity substrate with bounded by side walls and bottom

摘要

The first conductivity substrate (1) has a main surface and a groove (11) bounded by side walls (11d) and a botjtom (11a). On the side wall is a first gate electrode with an intermediate insulating film (9), whose top section has a first thickness, while a lower thickness lower section is deposited on the groove bottom with a second intermediate insulating film. A first doping region (2) of a first conductivity is formed in the substrate main surface, adjacent to the groove side wall and the top section of the gate electrode. A second conductivity doping region (3) is formed adjacent to the lower section of the gate electrode. On the latter is deposited a second gate electrode, also with an intermediate third insulating film (6). USE/ADVANTAGE - For EEPROMs, with facility for avalanche break down adjacent to first insulating layer and tunel effect adjacent to thin insulating layer.