| 摘要 |
PURPOSE:To increase the transition speed of electrons between a high-speed channel and a low-speed channel. CONSTITUTION:Between an i-type GaAs layer 4 constituting a high-speed channel and an i-type AlAs layer 2 constituting a low-speed channel, a super-lattice layer 3 is formed which is fabricated by laminating AlAs and GaAs, each corresponding to the thickness of one atomic layer, alternately in layers. |
