Method for planarizing a semiconductor substrate surface.
摘要
<p>The present invention is structured including a process of depositing a film (4) composed of BPSG or PSG on a substrate surface having unevenness, a process of depositing a SiO2 film (5) or depositing a film (5) composed of BPSG or PSG having concentration lower than phosphorus concentration or boron concentration in the film or a SiO2 film (5) on the film, (4) and a process of melting and fluidizing these films so as to flatten them by applying heat treatment. <IMAGE></p>
申请公布号
EP0519393(A2)
申请公布日期
1992.12.23
申请号
EP19920110128
申请日期
1992.06.16
申请人
SEMICONDUCTOR PROCESS LABORATORY CO., LTD.;ALCAN- TECH CO., INC.;CANON SALES CO., INC.
发明人
MAEDA, KAZUO C/O SEMICONDUCTOR PROCESS LABORATORY;MATSUI, BUNYA C/O SEMICONDUCTOR PROCESS LABORATORY;NISHIMOTO, YUKO C/O SEMICONDUCTOR PROCESS LAB. CO.
