发明名称 MEMORY DEVICE
摘要 <p>A wafer scale integrated circuit device comprising: a plurality of circuit cells formed in a common substrate, a plurality of communication paths between circuit cells, a plurality of switching means, coupled to the communication paths, for interconnecting a first path and a selected second path, a plurality of communication ports, at least a first being arranged to receive an external signal and at least a second being arranged to transmit an external signal, characterised by control means for controlling said switching means to open a circuit path from a said first port through said wafer and to a selected said second port different to the first to provide a switched communications link.</p>
申请公布号 WO1992022904(A1) 申请公布日期 1992.12.23
申请号 GB1992001070 申请日期 1992.06.15
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