发明名称 Laser trim protection process and structure
摘要 An element of an integrated circuit, such as an ion implanted region or a metal layer, may be laser trimmed without exposing P-N junctions or other circuit elements not to be trimmed to damage by the laser through use of the present protection process and structure. In the process, an oxide through which the laser trimming is carried out is formed over a selected portion of the circuit to be trimmed by the laser. A bare layer of a metal reflective to the laser radiant energy beam, such as aluminum, gold or silver, is formed surrounding the selected portion of the circuit. The selected portion of the integrated circuit is then trimmed with the laser. The oxide promotes trimming in the selected area by absorbing the laser radiant energy beam. The bare metal layer protects the portion of the integrated circuit underlying it by reflecting most of its energy.
申请公布号 US4272775(A) 申请公布日期 1981.06.09
申请号 US19790045323 申请日期 1979.06.04
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 COMPTON, JAMES B.;COMETTA, ROBERT A.;CULMER, DANIEL D.
分类号 H01L21/033;H01L21/268;(IPC1-7):H01L27/14 主分类号 H01L21/033
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