| 摘要 |
PURPOSE:To know the conductive type quickly and exactly, in identifying the conductive type of the semiconductor crystal having a multilayered epitaxially grown layer, by providing an ohmic electrode on a part of the surface of the layer to be identified, applying a voltage across the electrode and the contact probe provided on the layer to be identified, and identifying the conducting type by the voltage-current characteristics. CONSTITUTION:A p<-> or n<-> type layer 2 to be identified is formed on a p<+> type semiconductor 1, and an n<+> type layer 3 is provided thereon. In this case, the identification of the conductive type of the layer 2 to be identified with respect to the specimen wafer is carried out as follows. The layer 3 is removed to the part, where the effect of the impurities in the layer 3 is not apparent, by the etching or abrading method, and the layer 2 is exposed. An ohmic electrode 4 is deposited on a part of said surface. Then, the contact probe 5 made of Au and the like is contacted with a position on the surface of the layer 2 which is slightly separated from the electrode 4, and a Schottky barrier diode or an NIS diode is constituted. The conductive type is identified by the swing of the current when a voltage is applied, i.e. V-I characteristics. |
