| 摘要 |
PURPOSE: To provide a method for manufacturing a semiconductor device increasing capacitor capacitance of memory elements. CONSTITUTION: A method for manufacturing a semiconductor device comprises a step of forming an α-type silicon carbide layer 12 on a first conductive layer 10 used for a first electrode of a capacitor and a step for forming a second conductive layer 20 used for a second electrode of the capacitor on the α-type silicon carbide layer. By using SiC(α) being a high dielectric substance as a dielectric film of the capacitor, capacitance of the capacitor in a memory device can be increased. Further, it is not required to be formed thinner than the case where a substance having a low dielectric constant is used on the dielectric film, and it is possible to have a margin on the steps and contrive to increase yield of a more excellent element than in the prior art. |
