| 摘要 |
PURPOSE:To enable a light emitting element to be kept high in characteristics and to emit pure green light of high intensity. CONSTITUTION:A GaP clad layer 2, a GaInP single distorted quantum well type active layer 3, and a GaP clad layer 4 are successively grown on a GaP substrate 1. The active layer 3 is controlled in mixed crystal ratio and thickness by the effect of the distorted quantum well (formation of quantum well level), whereby light emitted from the layer 3 can be controlled in wavelength. As a light emitting element of this design is very simple in structure, it can be simplified in manufacturing process, and as a result it can be improved in mass- productivity and profitability. As Al is not required, the element concerned is sharply improved in moisture resistance. |
