| 摘要 |
Workstation apparatus for automatically and vertically removing defective devices from delicate high density multilayer interconnect substrates, and for removing devices and substrates from large area substrates without damaging the substrates or closely-spaced neighboring devices on the substrates. The apparatus is also usable to precisely measure semiconductor attach shear strength by applying a torsional force and identifying the arc angle to failure. A table assembly positions and secures a substrate comprising a device to be removed. A thermode is adhered to the device to be removed with a high temperature thermosetting adhesive. A heater stage in the table assembly preheats the substrate including the device to be removed. The thermode has a strip heater, a thermocouple and a passage for a cooling fluid. The thermode temperature is adjustable for curing the adhesive and for loosening the device from the substrate. The device is removed by applying torque and vertical tensile loading at the same time. When the device breaks loose from the substrate, torque is no longer applied. A control electronics and central processing unit precisely controls the operation. A torque transducer and a pressure and tensile loading transducer are mechanically connected to the thermode and electrically coupled to the control electronics and central processing unit to provide for feedback and control of the removal process. A method of removing devices is also disclosed.
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