SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a micronized non-volatile memory which can be read out at a high speed and operate at a low voltage. CONSTITUTION:In a non-volatile memory of this design, word lines W0-W2 formed of a first conductive layer 4 provided onto a semiconductor substrate 1 through the intermediary of a gate insulating film 3 and semiconductor regions 8 of certain conductivity opposite to that of the semiconductor substrate 1 provided on the substrate 1 between the word lines W0-W2 are provided. Data lines D0-D2 formed of a second conductive layer 6 provided onto the word lines W0-W2 through the intermediary of insulating films 5a and 5b so as to intersect the word lines W0-W2 are provided, and the lines D0-D2 are connected to the semiconductor regions 8 respectively to constitute the non-volatile memory.