| 摘要 |
PURPOSE:To manufacture a crystalline island having a double heterostructure as a light emitting element having a large emitting light intensity. CONSTITUTION:A fine surface of an Al2O3, etc., having large nucleus forming density is formed on a non-nucleus forming surface of SiO2, etc., formed on an Si substrate. N-type GaAs, n-type AlGaAs, nondoped AlGaAs, p-type AlGaAs, p-type GaAs polycrystals are grown thereon by using a MOSCVD method, electrodes are further formed, and an n-type AlGaAs polycrystal is exposed by etching as shown in Fig. (a). Then, after a resist is formed as shown in Fig. (b), the n-type GaAs is exposed by etching as shown in Fig. (c), an electrode 107 is formed as shown in Fig. (d), and the resist is removed to complete a light emitting element as shown in Fig. (e). The etching steps are divided into two thereby to reduce a decrease in the active region in the step, and to manufacture the element having a large emitting light intensity. |
