| 摘要 |
<p>PURPOSE: To increase current drive capability without increasing an area occupied by transistors by forming uneven parts in a width direction of a channel region. CONSTITUTION: After an insulation film composed of oxide films 15a, 15b is formed on a semiconductor substrate 14 of a first conductive type, a specific region of the insulation film is etched until a surface of the substrate is exposed and one opening part or more are formed. A silicon epitaxial layer 16 is formed in a specific thickness by a selective growing step on an upper face of the substrate 14, and a channel region is constituted in the uneven parts. Incidentally, this element region is one where the silicon epitaxial layer 16 operates as transistors. Accordingly, a surface area in a width direction of the channel region, namely a valid channel region, is increased, and it is possible to increase a channel width without increasing an area occupied by transistors and to increase current drive capability of the transistors.</p> |
