| 摘要 |
PURPOSE:To provide constitution for restraining crack defective of a ferroelectric thin film element used for a pyroelectric type infrared ray sensor, a piezoelectric dynamics amount sensor, a piezoelectric actuator, etc., and a method for manufacturing it. CONSTITUTION:When a substrate 1 is etched from a rear, anisotropic etching is first carried out to form a sharp pattern along a crystal face. In the process, isotropic etching is then carried out to make a angle between a side of the etched substrate 1 and a ferroelectric thin film element 2 shallow gradually as it comes close to a contact part 8. Thereby, a stress to the contact part is dissipated. It is possible to restrain crack defective of a ferroelectric thin film element in a contact part in this way. |
