发明名称 INTERNAL SUPPLY VOLTAGE GENERATING CIRCUIT
摘要 <p>PURPOSE: To obtain the internal source voltage generating circuit which makes a memory element to maintain a constant speed irrelevant of variation in temperature and stably controls it by increasing an output voltage according to a rise in temperature. CONSTITUTION: A 1st variable resistance element R1' and a 2nd variable resistance element R2' for a load which differ in resistance value from each other are connected in series between an output terminal 70 and a ground voltage, and a voltage dividing circuit 80 which includes their common terminal as its output node is provided in the internal source voltage generating circuit. Therefore, when the temperature rises, the resistance value of the variable resistance elements of the voltage dividing circuit becomes large and the quantity of the current flowing to it decreases, so the an internal source voltage rises through a comparator 60 by the decrease in the current quantity.</p>
申请公布号 JPH04366492(A) 申请公布日期 1992.12.18
申请号 JP19910244106 申请日期 1991.08.30
申请人 SAMSUNG ELECTRON CO LTD 发明人 TEEJIE JIN;JIYOONNYUN JIEON
分类号 G06F1/26;G05F1/46;G05F1/56;G05F1/567;G05F3/02;G05F3/24;G05F3/30;G11C5/14;G11C11/407;G11C11/4074;G11C11/413;H03F1/30;H03K19/00 主分类号 G06F1/26
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