| 摘要 |
PURPOSE:To transfer an electric charge horizontally by a method wherein a potential barrier by means of a p-n junction is installed at the both sides of a continuously expanding bulk channel layer and the horizontal width of the channel is controlled by means of the potential barrier. CONSTITUTION:An N layer 2 of an approximately 3mu depth is formed on a P type substrate 1, and P<+> layers 3A, 3B of an approximately 3mu depth are formed at the both sides thereof. The horizontal width 4 of the layer 2 between the layer 3A and the layer 3B increases continuously from 3mu to 6mu. The layer 2 is depleted by means of a depletion layer 6A between layers 3A-2 and a depletion layer 6B between layers 3B-2. A potential is highest at the central part of the layer 2 and as the width 4 increases, the potential at the center of the layer 2 continuously drops. On this account, electrons drift toward the arrow direction. An n drain or a Schottky electrode is installed at a part of the layer 2 where a horizontal width is the widest. With this 1 constitution, a charge transfer system having a low consumption electric power is obtained. |
