| 摘要 |
<p>PURPOSE:To contrive to enhance a high-frequency characteristic of a semiconductor device accompanying parasitic capacitance of a package by a method wherein a width of a lead corresponding to a pellet is so formed as to be smaller than that of the pellet. CONSTITUTION:This embodiment comprises a semiconductor pellet 4, leads 1 to 3 connecting to the pellet 4, and a resin sealing body 7, and a width (a) of a collector lead 1 is so formed as to be smaller than a width (b) of the pellet 4. Thus, a gap between the collect lead 1 and leads 2, 3 on both sides between which the collector lead 1 is interposed can sufficiently be widened, and as a result parasitic capacitance of a package (resin sealing body) 7 can be reduced. Thus, a high-frequency characteristic of a semiconductor device is enhanced.</p> |
