METHOD FOR ANNEALING SEMICONDUCTOR LAYER,申请号JP19910168783-传众专利搜索

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发明名称	METHOD FOR ANNEALING SEMICONDUCTOR LAYER
摘要
申请公布号	JPH04365316(A)	申请公布日期	1992.12.17
申请号	JP19910168783	申请日期	1991.06.12
申请人	SONY CORP	发明人	NOGUCHI TAKASHI
分类号	H01L21/20;H01L21/268	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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