VERFAHREN ZUM HERSTELLEN EINES MOS-TRANSISTORS AUF EINEM SUBSTRAT.,申请号DE19823280420-传众专利搜索

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发明名称	VERFAHREN ZUM HERSTELLEN EINES MOS-TRANSISTORS AUF EINEM SUBSTRAT.
摘要
申请公布号	DE3280420(D1)	申请公布日期	1992.12.17
申请号	DE19823280420	申请日期	1982.12.10
申请人	THORN EMI NORTH AMERICA INC., COLORADO SPRINGS, COL., US	发明人	RYDEN, WILLIAM D.;HANSON, MATTHEW V., COLORADO SPRINGS COLORADO 80906, US;DERBENWICK, GARY F., COLORADO SPRINGS COLORADO 80907, US;GNADINGER, ALFRED P., COLORADO SPRINGS COLORADO 80906, US;ADAMS, JAMES R., COLORADO SPRINGS COLORADO 80919, US
分类号	H01L21/033;H01L21/265;H01L21/336;H01L29/08;H01L29/41;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L21/28;H01L21/00	主分类号	H01L21/033
代理机构		代理人
主权项
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