| 摘要 |
<p>A method for anisotropically depositing a dielectric (e.g., 119) from a precursor gas (e.g., 19) in a reactor (e.g., 11) is disclosed. The method includes reduced pressure, reduced oxygen/precursor gas flow ratio, increased spacing between shower head (e.g., 19) and susceptor (e.g., 15); and also a susceptor (e.g., 15) having a diameter greater than the diameter of the wafer (e.g. 17).</p> |
