| 摘要 |
PURPOSE:To enable a distortion within a surface of a cantilever-type displacement element to be reduced and mechanical resonance frequency characteristics accompanied by it to be stabilized by providing a pirzoelectric thin film and an electrode for allowing the piezoelectric thin film to be displaced due to an inverse piezoelectric effect and then aligning the electrode while it is crossed in comb shape and is separated in width direction. CONSTITUTION:A cantilever-type displacement element consists of piezoelectric body thin films 5, 5' and comb-type electrodes 2a, 2b, 3, 4a, and 4b for applying a bias voltage for displacing a piezoelectric body. A process for producing the cantilever-type element allows an Si nitriding film to be formed by 5000Angstrom on both surfaces of an Si substrate 1 with a crystal orientation (100) surface as a main surface, the Si nitriding film on a rear surface of a substrate to be partially eliminated, an Si membrane to be formed, an Au electrode and a ZnO thin film to be pattern-formed in sequence and laminated on a surface of the substrate. and finally the Si membrane to be eliminated from the rear surface, thus forming a cantilever-type displacement element. The form of this element 1mm in length and 200mum in width and overlapping X of the electrodes 2a, 2b and 4a, 4b viewed from Y direction is 30mum. This displacement element is not warped, has a large amount of displacement, and can be manufactured easily, thus achieving a high integration. |
