发明名称 |
Capacitor and method of manufacturing the same. |
摘要 |
<p>A monomolecular film which can be used as a dielectric film is obtained on a substrate surface. For example, an aluminum foil electrode substrate having a natural oxide film is obtained by chemically adsorbing a chlorosilane-based surface active material comprising a fluorocarbon chain to the substrate. It is possible in this invention to have a pre-treatment as follows in lieu of using the natural oxide layer: forming an electrolytic oxidated layer by electrolytic oxidation of the metallic film, or bonding a thin oxide layer such as SiO2, Al2O3 being several hundred nanometers in thickness to the surface metallic film by spatter deposition, thus obtaining an excellent capacitor. A capacitor can be obtained by deposition of the aluminum layer on the surface bilayer laminated film. A thin film capacitor which has a high volume can be obtained comprising a thin (nanometer level), substantially pinhole-free dielectric film by using a siloxane-based monomolecular film having a fluorocarbon chain as the dielectric film. <IMAGE> <IMAGE></p> |
申请公布号 |
EP0518219(A2) |
申请公布日期 |
1992.12.16 |
申请号 |
EP19920109484 |
申请日期 |
1992.06.04 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OGAWA, KAZUFUMI;SOGA, MAMORU;MINO, NORIHISA |
分类号 |
B32B7/10;H01G4/14;H01G4/18;H01G4/20;H01G4/33 |
主分类号 |
B32B7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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