| 摘要 |
The method of fabricating a MOS transistor comprises the steps of successively forming a polycrystalline silicon film and a first silicon oxide film on a semiconductor substrate, forming a silicon nitride film on the first silicon oxide film on an element region, converting the polycrystalline silicon film on an element separation region into a second silicon oxide film, forming a second silicon oxide film on the side of the polycrystalline silicon film in the element region, forming a channel stopper layer underneath the element separation region of the semiconductor substrate, forming a third oxide film on the element separation region of the semiconductor substrate, and removing selectively the polycrystalline silicon, first silicon oxide film and the silicon nitride film to form a gate electrode forming region of the MOS transistor region.
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